IRF7459PBF
MOSFET N-CH 20V 12A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF7459PBF. This device features a 20V (Vdss) drain-source voltage and a continuous drain current (Id) of 12A at 25°C (Ta), with a maximum power dissipation of 2.5W (Ta). The IRF7459PBF offers a low on-resistance (Rds On) of 9mOhm at 12A and 10V, and a gate charge (Qg) of 35nC at 4.5V. It utilizes surface mount technology in an 8-SOIC package, with a maximum operating temperature of 150°C. Key specifications include a typical input capacitance (Ciss) of 2480pF at 10V. This component is suitable for applications requiring efficient switching and power management.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2480 pF @ 10 V |
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