IRF7459
MOSFET N-CH 20V 12A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7459 is a N-Channel Power MOSFET designed for efficient switching applications. This component features a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) capability of 12A at 25°C. The device exhibits a low on-resistance (Rds On) of 9mOhm maximum at 12A and 10V Vgs. With a typical gate charge (Qg) of 35 nC at 4.5V Vgs and input capacitance (Ciss) of 2480 pF at 10V Vds, it ensures fast switching performance. The IRF7459 is packaged in an 8-SOIC (0.154", 3.90mm Width) for surface mounting and can operate across a temperature range of -55°C to 150°C. Maximum power dissipation is rated at 2.5W (Ta). This component is commonly utilized in automotive, industrial, and consumer electronics power management solutions.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2480 pF @ 10 V |
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