IRF7458PBF
MOSFET N-CH 30V 14A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF7458PBF is a N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 30V Drain-Source Voltage (Vdss) and a continuous Drain Current (Id) of 14A at 25°C ambient temperature, with a maximum power dissipation of 2.5W (Ta). The low on-resistance (Rds On) is specified as 8mOhm at 14A and 16V Vgs. Key parameters include a Gate Charge (Qg) of 59 nC at 10V Vgs and an input capacitance (Ciss) of 2410 pF at 15V Vds. The IRF7458PBF is housed in an 8-SOIC surface mount package, suitable for demanding thermal management. Operating temperature ranges from -55°C to 150°C (TJ). This component is commonly utilized in industrial automation, power supplies, and automotive electronics due to its robust performance characteristics.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 14A, 16V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 16V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2410 pF @ 15 V |
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