IRF7457TRPBF
MOSFET N-CH 20V 15A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® Series N-Channel MOSFET, part number IRF7457TRPBF, offers a 20V drain-source voltage and a continuous drain current of 15A at 25°C. This surface-mount device features a low on-resistance of 7mOhm at 15A and 10V gate-source voltage, with a typical Vgs(th) of 3V at 250µA. The gate charge is specified at 42 nC maximum at 4.5V, and input capacitance (Ciss) is 3100 pF maximum at 10V. The IRF7457TRPBF operates across a temperature range of -55°C to 150°C and has a maximum power dissipation of 2.5W. The component is supplied in an 8-SOIC package on tape and reel. This MOSFET is commonly utilized in automotive, industrial, and consumer electronics applications requiring efficient power switching.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 10 V |
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