IRF7456TRPBF-1
MOSFET N-CH 20V 16A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' HEXFET® IRF7456TRPBF-1 is an N-Channel power MOSFET designed for high-efficiency switching applications. This component features a 20V Drain-Source Voltage (Vdss) and a continuous drain current of 16A (Ta) at 25°C. The Rds(On) is specified at a maximum of 6.5mOhm at 16A and 10V Vgs, with a typical Rds(On) achievable at lower gate drive voltages of 2.8V. With a gate charge (Qg) of 62 nC (Max) at 5V Vgs and input capacitance (Ciss) of 3640 pF (Max) at 15V Vds, the IRF7456TRPBF-1 offers efficient switching characteristics. The device is packaged in an 8-SOIC (0.154", 3.90mm Width) format, suitable for surface mounting. Its maximum power dissipation is 2.5W (Ta), and it operates across a temperature range of -55°C to 150°C (TJ). This MOSFET finds application in various industries, including automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3640 pF @ 15 V |
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