IRF7456TRPBF
MOSFET N-CH 20V 16A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF7456TRPBF, features a 20V Drain-Source Voltage (Vdss) and a continuous drain current of 16A at 25°C. This surface mount device, packaged in an 8-SOIC, offers a low on-resistance of 6.5mOhm at 16A and 10V Vgs. Key parameters include a gate charge of 62 nC at 5V and input capacitance (Ciss) of 3640 pF at 15V. The device operates within a temperature range of -55°C to 150°C. This component is suitable for applications in automotive, industrial, and consumer electronics sectors. The IRF7456TRPBF is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3640 pF @ 15 V |