IRF7456PBF
MOSFET N-CH 20V 16A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7456PBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a Drain to Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 16A at 25°C with a maximum power dissipation of 2.5W. The Rds On is specified at a low 6.5mOhm at 16A and 10V gate drive, with a typical gate charge (Qg) of 62 nC at 5V. The input capacitance (Ciss) is 3640 pF at 15V. Operating across a temperature range of -55°C to 150°C, the IRF7456PBF is housed in an 8-SOIC package, suitable for surface mounting. This component finds application in power management, consumer electronics, and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3640 pF @ 15 V |
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