IRF7455TRPBF-1
MOSFET N-CH 30V 15A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF7455TRPBF-1 is an N-Channel power MOSFET designed for efficient switching applications. This component offers a 30 V drain-source voltage (Vdss) and a continuous drain current (Id) of 15 A at 25°C. The low on-resistance of 7.5 mOhm at 15 A and 10 V gate-source voltage (Vgs) ensures minimal conduction losses. Key characteristics include a maximum power dissipation of 2.5 W (Ta) and a gate charge (Qg) of 56 nC at 5 V. The device features a 8-SOIC package, suitable for surface mounting, and operates across a temperature range of -55°C to 150°C. The IRF7455TRPBF-1 finds application in power management, automotive electronics, and industrial control systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3480 pF @ 25 V |
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