IRF7455TRPBF
MOSFET N-CH 30V 15A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF7455TRPBF, is a 30V device designed for high-efficiency switching applications. This surface-mount component, packaged in an 8-SOIC, features a maximum continuous drain current of 15A (Ta) and a low on-resistance of 7.5mOhm at 15A and 10V Vgs. The device boasts a typical gate charge of 56 nC at 5V Vgs and an input capacitance of 3480 pF at 25V Vds. With a maximum power dissipation of 2.5W (Ta) and an operating temperature range of -55°C to 150°C, the IRF7455TRPBF is suitable for use in automotive, industrial, and consumer electronics power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3480 pF @ 25 V |
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