IRF7455
MOSFET N-CH 30V 15A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7455 is an N-Channel power MOSFET designed for demanding applications. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 15A at 25°C, with a maximum power dissipation of 2.5W. The low on-resistance of 7.5mOhm at 15A and 10V gate-source voltage ensures efficient power transfer. With a gate charge (Qg) of 56nC at 5V and input capacitance (Ciss) of 3480pF at 25V, the IRF7455 offers optimized switching characteristics. It supports gate drive voltages from 2.8V to 10V and has a maximum gate-source voltage of ±12V. The device is housed in a surface-mount 8-SOIC package, commonly used in industrial, automotive, and power supply designs. Operating temperature ranges from -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3480 pF @ 25 V |
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