IRF7453TRPBF
MOSFET N-CH 250V 2.2A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies HEXFET® IRF7453TRPBF is an N-Channel Power MOSFET designed for demanding applications. This component features a 250 V breakdown voltage and a continuous drain current capability of 2.2 A at 25°C. It offers a low on-resistance of 230 mOhm at 1.3 A and 10 V, with a gate drive voltage requirement of 10 V. Key parameters include a gate charge (Qg) of 38 nC at 10 V and an input capacitance (Ciss) of 930 pF at 25 V. The device is packaged in an 8-SOIC (0.154", 3.90mm width) and supports surface mount installation. Its power dissipation is rated at 2.5 W (Ta). This MOSFET is suitable for use in industries requiring high-voltage switching, including power supplies and motor control. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 1.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 930 pF @ 25 V |
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