IRF7453PBF
MOSFET N-CH 250V 2.2A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7453PBF is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 250 V and a continuous Drain Current (Id) of 2.2 A at 25°C. With a maximum On-Resistance (Rds On) of 230 mOhm at 1.3 A and 10 V gate drive, it offers efficient power handling. The IRF7453PBF boasts a low Gate Charge (Qg) of 38 nC at 10 V and an Input Capacitance (Ciss) of up to 930 pF at 25 V. It is supplied in an 8-SOIC surface mount package, suitable for high-density board designs. The operational temperature range is -55°C to 150°C (TJ), and it has a maximum power dissipation of 2.5 W (Ta). This MOSFET is commonly utilized in power supply, lighting, and industrial motor control applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 1.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 930 pF @ 25 V |
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