IRF7453
MOSFET N-CH 250V 2.2A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7453 is a 250V N-Channel Power MOSFET in an 8-SOIC package. This device features a continuous drain current of 2.2A at 25°C ambient temperature with a maximum power dissipation of 2.5W. The Rds(On) is specified at 230mOhm maximum at 1.3A drain current and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 38 nC maximum at 10V Vgs and input capacitance (Ciss) of 930 pF maximum at 25V Vds. The operating temperature range is -55°C to 150°C. This MOSFET is suitable for applications in power supply, motor control, and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 1.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 930 pF @ 25 V |
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