IRF7452QTRPBF
MOSFET N-CH 100V 4.5A 8-SOICManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' IRF7452QTRPBF is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a 100V Drain-to-Source Voltage (Vdss) and a continuous drain current (Id) of 4.5A at 25°C. The MOSFET offers a low on-resistance (Rds On) of 60mOhm maximum at 2.7A and 10V Vgs, contributing to efficient power switching. Key parameters include a gate charge (Qg) of 50 nC maximum at 10V and an input capacitance (Ciss) of 930 pF maximum at 25V. The IRF7452QTRPBF is housed in an 8-SOIC package, suitable for surface mount assembly, and is supplied in Cut Tape. This component is widely utilized in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 2.7A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | 8-SO |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 930 pF @ 25 V |