IRF7452
MOSFET N-CH 100V 4.5A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF7452, is a surface-mount device in an 8-SOIC package. This component features a Drain-to-Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 4.5 A at 25°C ambient temperature, with a maximum power dissipation of 2.5 W. The Rds On is specified at a maximum of 60 mOhm at 2.7 A and 10 Vgs. Key electrical parameters include a gate charge (Qg) of 50 nC and input capacitance (Ciss) of 930 pF at 25 V. The operating temperature range is -55°C to 150°C. This MOSFET is utilized across various industries, including automotive and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 2.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 930 pF @ 25 V |
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