IRF7451TR
MOSFET N-CH 150V 3.6A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF7451TR, is designed for demanding power management applications. This component features a Drain-Source Voltage (Vds) of 150V and a continuous Drain Current (Id) of 3.6A at 25°C ambient. The device exhibits a maximum Rds(on) of 90mOhm at 2.2A and 10V Vgs, with a typical Gate Charge (Qg) of 41 nC at 10V. Input capacitance (Ciss) is specified at a maximum of 990 pF at 25V. The IRF7451TR is housed in an 8-SOIC package, suitable for surface mount assembly, and operates within a temperature range of -55°C to 150°C. Power dissipation is rated at 2.5W ambient. This MOSFET is commonly utilized in industrial automation, power supplies, and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 990 pF @ 25 V |
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