IRF7451PBF
MOSFET N-CH 150V 3.6A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF7451PBF. This 150V device features a continuous drain current of 3.6A at 25°C (Ta) and a maximum power dissipation of 2.5W (Ta). The Rds On is specified at 90mOhm maximum for 2.2A and 10V Vgs. Key parameters include a gate charge (Qg) of 41nC (max) at 10V and input capacitance (Ciss) of 990pF (max) at 25V. Designed for surface mounting, it is housed in an 8-SOIC package. This component is suitable for applications in industrial and automotive sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 990 pF @ 25 V |
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