IRF7451
MOSFET N-CH 150V 3.6A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7451 is an N-Channel power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 150 V and a continuous Drain current (Id) of 3.6 A at 25°C. Optimized for efficient switching, it offers a low Rds On of 90 mOhm at 2.2 A and 10 V. The device boasts a maximum power dissipation of 2.5 W (Ta) and a gate charge (Qg) of 41 nC at 10 V. With an input capacitance (Ciss) of 990 pF at 25 V, it is suitable for high-frequency operation. The IRF7451 is presented in an 8-SOIC surface mount package, facilitating integration into compact designs. Its operating temperature range spans from -55°C to 150°C. This MOSFET finds utility in power supply units, motor control, and general-purpose power switching across various industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 990 pF @ 25 V |