IRF7450TRPBF
MOSFET N-CH 200V 2.5A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7450TRPBF is an N-Channel Power MOSFET designed for efficient switching applications. This component features a 200V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) rating of 2.5A at 25°C. The device exhibits a maximum on-resistance (Rds On) of 170mOhm at 1.5A and 10V gate-source voltage. With a gate charge (Qg) of 39 nC at 10V, it offers optimized switching performance. The input capacitance (Ciss) is rated at 940 pF maximum at 25V. This MOSFET is housed in an 8-SOIC package (8-SO) suitable for surface mounting and operates across a wide temperature range of -55°C to 150°C. The IRF7450TRPBF is commonly utilized in power supply designs, motor control, and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 940 pF @ 25 V |
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