IRF7433TRPBF
MOSFET P-CH 12V 8.9A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF7433TRPBF, features a 12V drain-source breakdown voltage and an 8.9A continuous drain current at 25°C ambient. This device offers a maximum on-resistance of 24mOhm at 8.7A and 4.5V gate-source voltage. With a gate charge of 20 nC at 4.5V and input capacitance of 1877 pF at 10V, it is suitable for demanding power switching applications. The MOSFET operates within a temperature range of -55°C to 150°C and is housed in an 8-SOIC package, supplied on tape and reel. Key industries utilizing this component include automotive and industrial control systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 8.7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1877 pF @ 10 V |