IRF7433PBF
MOSFET P-CH 12V 8.9A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF7433PBF, offers a 12V drain-source voltage and a continuous drain current of 8.9A at 25°C. This surface-mount device features a low on-resistance of 24mOhm at 8.7A and 4.5V Vgs, with a maximum gate charge of 20 nC at 4.5V. Designed with a -55°C to 150°C operating temperature range, it is housed in an 8-SOIC package. Key specifications include an input capacitance (Ciss) of 1877 pF at 10V and a maximum power dissipation of 2.5W (Ta). Suitable for applications in consumer electronics and industrial automation, this MOSFET utilizes Metal Oxide technology.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 8.7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1877 pF @ 10 V |
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