IRF7425TR
MOSFET P-CH 20V 15A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel Power MOSFET, part number IRF7425TR, offers 20V drain-source breakdown voltage and 15A continuous drain current capability at 25°C ambient. This device features a low ON-resistance of 8.2mOhm maximum at 15A and 4.5V gate-source voltage, with a low gate charge of 130 nC maximum at 4.5V. The IRF7425TR is housed in an 8-SOIC package suitable for surface mounting, with a power dissipation rating of 2.5W at 25°C ambient. It operates across a wide temperature range of -55°C to 150°C. This component is utilized in various industrial and automotive applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Rds On (Max) @ Id, Vgs | 8.2mOhm @ 15A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7980 pF @ 15 V |
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