IRF7425PBF
MOSFET P-CH 20V 15A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF7425PBF, offers a 20V drain-to-source voltage and 15A continuous drain current at 25°C. This surface mount device features a low Rds On of 8.2mOhm at 15A and 4.5V Vgs, with a gate charge of 130nC at 4.5V. The input capacitance (Ciss) is 7980pF maximum at 15V. Packaged in an 8-SOIC (0.154" width), it dissipates a maximum of 2.5W at 25°C. Operating temperature ranges from -55°C to 150°C. This component is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Rds On (Max) @ Id, Vgs | 8.2mOhm @ 15A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7980 pF @ 15 V |
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