IRF7425
MOSFET P-CH 20V 15A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies presents the IRF7425, a P-channel HEXFET® power MOSFET. This component features a drain-to-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 15 A at 25°C. The device exhibits a low on-resistance (Rds On) of 8.2 mOhm at 15 A and 4.5 V gate-source voltage (Vgs). It is designed for surface mounting in an 8-SOIC package, offering a power dissipation of 2.5 W. Key electrical parameters include a maximum gate charge (Qg) of 130 nC at 4.5 V and an input capacitance (Ciss) of 7980 pF at 15 V. The operating temperature range is -55°C to 150°C. This MOSFET is suitable for applications in industrial and automotive sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Rds On (Max) @ Id, Vgs | 8.2mOhm @ 15A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7980 pF @ 15 V |
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