IRF7424PBF
MOSFET P-CH 30V 11A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7424PBF is a P-Channel MOSFET designed for high-performance applications. This device features a 30V drain-to-source voltage (Vdss) and supports a continuous drain current (Id) of 11A at 25°C. The Rds(on) is specified at a maximum of 13.5mOhm at 11A and 10V gate-source voltage. Delivered in 8-SOIC packaging, it offers a surface mount capability with a power dissipation of 2.5W. Key parameters include a gate charge (Qg) of 110 nC at 10V and an input capacitance (Ciss) up to 4030 pF at 25V. The operating temperature range is -55°C to 150°C. This component is utilized in various industries, including automotive and industrial power control systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4030 pF @ 25 V |
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