IRF7424GTRPBF
MOSFET P-CH 30V 11A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF7424GTRPBF is a P-Channel, 30V MOSFET designed for demanding power management applications. This device features a continuous drain current (Id) capability of 11A at 25°C with a maximum power dissipation of 2.5W. The low on-resistance (Rds On) of 13.5mOhm at 11A and 10V gate drive voltage, coupled with a gate charge (Qg) of 110 nC at 10V, ensures efficient switching performance. The input capacitance (Ciss) is rated at 4030 pF at 25V. This MOSFET is housed in an 8-SOIC package suitable for surface mounting and operates across a wide temperature range of -55°C to 150°C. It finds application in various industries including automotive, industrial, and consumer electronics requiring robust power switching solutions.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4030 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
