IRF7422D2TRPBF
MOSFET P-CH 20V 4.3A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies P-Channel MOSFET, part of the FETKY™ series, is the IRF7422D2TRPBF. This device features a 20V drain-source voltage and a continuous drain current of 4.3A at 25°C (Ta). With a maximum power dissipation of 2W (Ta) and a surface mount 8-SOIC package, it is designed for efficient thermal management. Key electrical parameters include a low Rds(on) of 90mOhm at 2.2A and 4.5V, and a gate charge of 22nC at 4.5V. The integrated Schottky diode provides voltage clamping capabilities. This component is suitable for applications in power management and automotive electronics. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: FETKY™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.2A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 610 pF @ 15 V |
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