IRF7421D1PBF
MOSFET N-CH 30V 5.8A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies FETKY™ series N-Channel MOSFET, part number IRF7421D1PBF. This device features a 30V drain-to-source voltage and continuous drain current capability of 5.8A at 25°C, with a maximum power dissipation of 2W. The IRF7421D1PBF is constructed using MOSFET technology and is housed in an 8-SOIC package for surface mounting. Key parameters include a maximum on-resistance of 35mOhm at 4.1A and 10V, and a gate charge of 27 nC at 10V. It incorporates an isolated Schottky diode, offering enhanced performance characteristics. The operating temperature range is -55°C to 150°C. This component finds application in power management, automotive, and industrial sectors.
Additional Information
Series: FETKY™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 4.1A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 25 V |