IRF7421D1
MOSFET N-CH 30V 5.8A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies FETKY™ series N-Channel MOSFET, part number IRF7421D1. This 30 V device features a continuous drain current of 5.8 A at 25°C and a maximum power dissipation of 2 W. The IRF7421D1 offers a low on-resistance of 35 mOhm at 4.1 A and 10 V gate drive. Key characteristics include a gate charge of 27 nC at 10 V and input capacitance of 510 pF at 25 V. This MOSFET incorporates an isolated Schottky diode, enhancing its suitability for applications requiring fast switching and reduced reverse recovery charge. Packaged in an 8-SOIC surface mount format, it operates across a temperature range of -55°C to 150°C. This component finds application in power management and switching circuits across various industries including automotive, industrial automation, and consumer electronics.
Additional Information
Series: FETKY™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 4.1A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 25 V |
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