IRF7420TRPBF-1
MOSFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF7420TRPBF-1 is a P-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-to-Source Voltage (Vdss) of 12V and a continuous Drain Current (Id) of 11.5A at 25°C (Ta). The Rds On is minimized to 14mOhm at 11.5A and 4.5V Vgs, ensuring low conduction losses. Key parameters include a Gate Charge (Qg) of 38 nC at 4.5V and an Input Capacitance (Ciss) of 3529 pF at 10V Vds. With a maximum power dissipation of 2.5W (Ta) and an operating temperature range of -55°C to 150°C (TJ), this surface mount device is suitable for demanding environments. The 8-SOIC package (0.154", 3.90mm Width) is ideal for compact designs. This MOSFET is commonly utilized in power management, automotive systems, and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 11.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3529 pF @ 10 V |
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