IRF7420TRPBF
MOSFET P-CH 12V 11.5A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-channel MOSFET, part number IRF7420TRPBF, offers a 12V drain-source breakdown voltage with a continuous drain current capability of 11.5A at 25°C (Tc). This device features a low on-resistance of 14mOhm maximum at 11.5A and 4.5V Vgs. The IRF7420TRPBF is presented in a standard 8-SOIC package suitable for surface mounting. Key electrical parameters include a maximum gate charge (Qg) of 38 nC at 4.5V and a maximum input capacitance (Ciss) of 3529 pF at 10V. Power dissipation is rated at 2.5W (Ta). This component is utilized in a variety of applications including automotive, industrial power control, and consumer electronics power management.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 11.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3529 pF @ 10 V |
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