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IRF7420TRPBF

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IRF7420TRPBF

MOSFET P-CH 12V 11.5A 8SO

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies HEXFET® P-channel MOSFET, part number IRF7420TRPBF, offers a 12V drain-source breakdown voltage with a continuous drain current capability of 11.5A at 25°C (Tc). This device features a low on-resistance of 14mOhm maximum at 11.5A and 4.5V Vgs. The IRF7420TRPBF is presented in a standard 8-SOIC package suitable for surface mounting. Key electrical parameters include a maximum gate charge (Qg) of 38 nC at 4.5V and a maximum input capacitance (Ciss) of 3529 pF at 10V. Power dissipation is rated at 2.5W (Ta). This component is utilized in a variety of applications including automotive, industrial power control, and consumer electronics power management.

Additional Information

Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C11.5A (Tc)
Rds On (Max) @ Id, Vgs14mOhm @ 11.5A, 4.5V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Vgs(th) (Max) @ Id900mV @ 250µA
Supplier Device Package8-SO
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds3529 pF @ 10 V

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