IRF7420TR
MOSFET P-CH 12V 11.5A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF7420TR, is a surface mount device in an 8-SOIC package. This component features a continuous drain current of 11.5A (Tc) and a drain-to-source voltage of 12V. The Rds On is specified at a maximum of 14mOhm at 11.5A and 4.5V gate-source voltage. Key parameters include a gate charge of 38 nC at 4.5V and input capacitance of 3529 pF at 10V. The device supports gate drive voltages from 1.8V to 4.5V and has a maximum gate-source voltage tolerance of ±8V. With a maximum power dissipation of 2.5W (Ta) and an operating temperature range of -55°C to 150°C, the IRF7420TR is suitable for applications in automotive, industrial, and power management systems. This device is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 11.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3529 pF @ 10 V |