IRF7416TRPBF-1
MOSFET P-CH 30V 10A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF7416TRPBF-1, offers a 30V drain-source voltage and a continuous drain current capability of 10A at 25°C. This device features a low on-resistance of 20mOhm maximum at 5.6A and 10V Vgs. The IRF7416TRPBF-1 is designed for surface mounting in an 8-SOIC package, with a power dissipation rating of 2.5W. Key parameters include a maximum gate charge of 92 nC at 10V and input capacitance of 1700 pF at 25V. The operating temperature range is -55°C to 150°C. This component is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 5.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.04V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 92 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 25 V |