IRF7413ZTR
MOSFET N-CH 30V 13A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF7413ZTR, is designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 13A at 25°C. The low on-resistance (Rds On) of 10mOhm at 13A and 10V gate drive, coupled with a maximum gate charge of 14 nC at 4.5V, ensures efficient switching performance. With a maximum power dissipation of 2.5W (Ta) and an operating temperature range of -55°C to 150°C, this surface-mount 8-SOIC package is suitable for automotive, industrial, and power supply applications. Key parameters include input capacitance (Ciss) of 1210 pF at 15V and a threshold voltage (Vgs(th)) of 2.25V.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1210 pF @ 15 V |