IRF7413TRPBF-1
MOSFET N-CH 30V 13A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel MOSFET, part number IRF7413TRPBF-1, offers a 30V drain-source breakdown voltage and a continuous drain current capability of 13A at 25°C. This surface-mount device features a maximum on-resistance of 11mOhm at 7.3A and 10V Vgs. Key parameters include a gate charge of 79 nC at 10V and input capacitance of 1800 pF at 25V. The IRF7413TRPBF-1 is packaged in an 8-SOIC (0.154", 3.90mm Width) in tape and reel. Its operating temperature range is -55°C to 150°C. This component is commonly utilized in automotive, industrial, and consumer electronics applications requiring efficient power switching.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 7.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 79 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V |
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