IRF7413PBF
MOSFET N-CH 30V 13A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF7413PBF, offers a 30V drain-source voltage with a continuous drain current capability of 13A at 25°C. This surface-mount device features a low on-resistance of 11mOhm at 7.3A and 10V Vgs, with a typical gate charge of 79 nC at 10V. The IRF7413PBF is designed for applications requiring efficient switching and power handling, with a maximum power dissipation of 2.5W. Its 8-SOIC package ensures compatibility with standard surface-mount assembly processes. This component finds utility in various industrial and consumer electronics, including power management and motor control systems. The device operates across a temperature range of -55°C to 150°C (TJ) and supports gate-source voltages up to ±20V.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 7.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 79 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V |