IRF7413ATR
MOSFET N-CH 30V 12A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7413ATR is an N-Channel MOSFET designed for efficient power switching applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 12A at 25°C ambient temperature, with a maximum power dissipation of 2.5W. The low on-resistance of 13.5mOhm at 6.6A and 10V gate-source voltage, coupled with a gate charge of 79 nC, ensures minimal conduction and switching losses. It operates with a gate-source voltage range of ±20V and a threshold voltage of 1V. The IRF7413ATR is housed in an 8-SOIC package suitable for surface mounting and operates across a wide temperature range of -55°C to 150°C. This component is commonly utilized in automotive, industrial, and consumer electronics sectors for power management and control circuits.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 79 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V |