IRF7413A
MOSFET N-CH 30V 12A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7413A is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) capability of 12 A at 25°C, with a maximum power dissipation of 2.5 W. The on-resistance (Rds On) is specified at a low 13.5 mOhm at 6.6 A and 10 V gate-source voltage. It offers a gate charge (Qg) of 79 nC at 10 V and input capacitance (Ciss) of 1800 pF at 25 V. The IRF7413A is housed in an 8-SOIC package for surface mounting and is suitable for various industries including automotive, industrial automation, and consumer electronics. Drive voltages range from 4.5 V to 10 V, with a maximum gate-source voltage of ±20 V.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 79 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V |