IRF7406GTRPBF
MOSFET P-CH 30V 5.8A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF7406GTRPBF is a P-Channel Power MOSFET designed for demanding applications. This device features a Vds of 30V and a continuous drain current capability of 5.8A at 25°C (Ta). With a low Rds(on) of 45mOhm at 2.8A and 10V Vgs, it ensures efficient power delivery. The MOSFET is packaged in an 8-SOIC (0.154", 3.90mm Width) format on Tape & Reel (TR) for automated assembly. Key electrical characteristics include a gate charge (Qg) of 59 nC maximum at 10V and input capacitance (Ciss) of 1100 pF maximum at 25V. The maximum power dissipation is 2.5W (Ta). This component is suitable for use in power management, automotive, and industrial control systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
