IRF7404TRPBF
MOSFET P-CH 20V 6.7A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel Power MOSFET, part number IRF7404TRPBF, is designed for efficient power switching applications. This device features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 6.7A at 25°C. The Rds(On) is specified at a maximum of 40mOhm when driven at 4.5V with a 3.2A drain current. It offers a typical Gate Charge (Qg) of 50 nC at 4.5V and an Input Capacitance (Ciss) of 1500 pF at 15V. The IRF7404TRPBF is housed in an 8-SOIC package for surface mounting and supports a maximum power dissipation of 2.5W. This component is suitable for use in automotive, industrial, and consumer electronics sectors. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 3.2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 15 V |
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