IRF7404PBF
MOSFET P-CH 20V 6.7A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF7404PBF, is a surface-mount device designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 20 V and a continuous drain current (Id) of 6.7 A at 25°C, with a maximum power dissipation of 2.5 W (Ta). The Rds On is specified at 40 mOhm maximum at 3.2 A and 4.5 V gate drive. Key parameters include a gate charge (Qg) of 50 nC maximum at 4.5 V and input capacitance (Ciss) of 1500 pF maximum at 15 V. Optimized for a drive voltage range of 2.7 V to 4.5 V, this MOSFET operates within an extended temperature range of -55°C to 150°C. The 8-SOIC package (0.154", 3.90mm width) is supplied in a tube. This component finds application in various industrial sectors, including automotive and telecommunications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 3.2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 15 V |
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