IRF7403TRPBF
MOSFET N-CH 30V 8.5A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7403TRPBF is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a 30 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 8.5 A at 25°C. The Rds On is specified at a maximum of 22 mOhm at 4 A and 10 V Vgs. With a gate charge (Qg) of 57 nC at 10 V and input capacitance (Ciss) of 1200 pF at 25 V, it offers optimized switching performance. The device is supplied in an 8-SOIC package, suitable for surface mounting, and operates within a temperature range of -55°C to 150°C. Its power dissipation capability is 2.5 W at 25°C. This MOSFET is commonly utilized in automotive, industrial, and consumer electronics sectors for various power management functions.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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