IRF7403PBF
MOSFET N-CH 30V 8.5A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7403PBF is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 8.5A at 25°C. The IRF7403PBF offers a low on-resistance (Rds On) of 22mOhm maximum at 4A and 10V Vgs, ensuring efficient power transfer. With a gate charge (Qg) of 57nC maximum and input capacitance (Ciss) of 1200pF maximum, it supports fast switching performance. The MOSFET is packaged in an 8-SOIC (0.154", 3.90mm Width) surface-mount configuration, rated for a maximum power dissipation of 2.5W. Operating across a junction temperature range of -55°C to 150°C, this component is suitable for use in power management, automotive, and industrial control systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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