IRF7402TRPBF
MOSFET N-CH 20V 6.8A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7402TRPBF is an N-Channel Power MOSFET designed for efficient switching applications. This device features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 6.8A at 25°C. The low on-resistance (Rds On) of 35mOhm at 4.1A and 4.5V gate-source voltage (Vgs) ensures minimal power loss during conduction. With a gate charge (Qg) of 22 nC at 4.5V, it offers fast switching characteristics. The MOSFET is packaged in an 8-SOIC (0.154", 3.90mm Width) and supports surface mounting. The maximum power dissipation is rated at 2.5W. This component is suitable for use in automotive, industrial, and consumer electronics applications requiring robust power management. Operating temperature range is -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 4.1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 15 V |
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