IRF7402PBF
MOSFET N-CH 20V 6.8A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies HEXFET® IRF7402PBF is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 6.8A at 25°C ambient. Its low on-resistance (Rds On) of 35mOhm is achieved at 4.1A and 4.5V Vgs. The device offers a low gate charge (Qg) of 22 nC at 4.5V Vgs, contributing to efficient switching performance. With an input capacitance (Ciss) of 650 pF at 15V Vds, it is suitable for various power management tasks. The IRF7402PBF is packaged in an 8-SOIC (0.154", 3.90mm Width) for surface mounting and operates across a wide temperature range of -55°C to 150°C. The maximum power dissipation is 2.5W. This MOSFET finds application in industries such as consumer electronics and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 4.1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 15 V |
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