IRF7401TRPBF
MOSFET N-CH 20V 8.7A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF7401TRPBF. This device features a 20V drain-source breakdown voltage and a continuous drain current of 8.7A at 25°C. The Rds(on) is specified at a maximum of 22mOhm at 4.1A and 4.5V gate-source voltage. Key parameters include a gate charge (Qg) of 48nC at 4.5V and input capacitance (Ciss) of 1600pF at 15V. The device supports a maximum power dissipation of 2.5W under typical conditions and operates across a wide temperature range of -55°C to 150°C. It is packaged in an 8-SOIC (0.154" width) for surface mounting and supplied on tape and reel. This MOSFET is suitable for applications in power management and switching circuits within the automotive and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 4.1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 15 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
