IRF7353D2TRPBF
MOSFET N-CH 30V 6.5A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies FETKY™ N-Channel MOSFET, part number IRF7353D2TRPBF, is a 30V device designed for demanding applications. This N-channel MOSFET features an integrated Schottky diode for enhanced performance and protection. With a continuous drain current capability of 6.5A (Ta) and a low Rds(on) of 29mOhm @ 5.8A, 10V, it offers efficient power switching. The IRF7353D2TRPBF is supplied in a compact 8-SOIC package, suitable for surface mounting. Key parameters include a gate charge of 33 nC @ 10V and input capacitance of 650 pF @ 25V. Operating across a temperature range of -55°C to 150°C, this component is utilized in automotive and industrial power management systems.
Additional Information
Series: FETKY™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 5.8A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 25 V |
Request a Quote
Clients Also Buy
NTTD4401FR2
MOSFET P-CH 20V 2.4A MICRO8
NTMSD3P102R2
MOSFET P-CH 20V 2.34A 8SOIC
NTTD4401FR2G
MOSFET P-CH 20V 2.4A MICRO8
