IRF7353D2PBF
MOSFET N-CH 30V 6.5A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies FETKY™ series N-Channel MOSFET, part number IRF7353D2PBF. This 30V device features a continuous drain current of 6.5A at 25°C and a maximum power dissipation of 2W. The IRF7353D2PBF offers a low Rds(on) of 29mOhm at 5.8A and 10V, with a gate charge of 33 nC at 10V and input capacitance of 650 pF at 25V. It includes an isolated Schottky diode, a key feature of the FETKY™ family. Designed for efficient switching, this MOSFET is suitable for applications in power management, automotive systems, and industrial control. The component is supplied in a surface mount 8-SOIC package and operates within a temperature range of -55°C to 150°C.
Additional Information
Series: FETKY™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 5.8A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 25 V |