IRF7353D2
MOSFET N-CH 30V 6.5A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies FETKY™ N-Channel MOSFET, part number IRF7353D2, offers a 30V drain-source voltage and a continuous drain current of 6.5A at 25°C. This device features a low on-resistance of 29mOhm at 5.8A and 10V Vgs, with a gate charge of 33nC at 10V. The integrated Schottky diode enhances performance. Designed for efficient power management, this MOSFET is suitable for applications in automotive and industrial sectors. It is supplied in an 8-SOIC package for surface mounting and supports a maximum power dissipation of 2W. Operating temperature range is -55°C to 150°C.
Additional Information
Series: FETKY™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 5.8A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 25 V |
Request a Quote
Clients Also Buy
NTTD4401FR2
MOSFET P-CH 20V 2.4A MICRO8
NTMSD3P102R2
MOSFET P-CH 20V 2.34A 8SOIC
NTTD4401FR2G
MOSFET P-CH 20V 2.4A MICRO8
