IRF7353D1PBF
MOSFET N-CH 30V 6.5A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies IRF7353D1PBF is an N-Channel MOSFET from the FETKY™ series. This component offers a Drain to Source Voltage (Vdss) of 30V and a continuous Drain current (Id) of 6.5A at 25°C. Featuring an integrated Schottky Diode, it is supplied in an 8-SOIC package for surface mounting. The maximum power dissipation is 2W at 25°C. Key electrical characteristics include a typical Rds On of 32mOhm at 5.8A and 10V, with a gate charge (Qg) of 33 nC at 10V. Input capacitance (Ciss) is 650 pF at 25V. The operating temperature range is -55°C to 150°C. This component is suitable for applications in consumer electronics and industrial power management.
Additional Information
Series: FETKY™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 5.8A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 25 V |
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